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1

Molybdenum substitutional doping and its effects on phase transition properties in single crystalline vanadium dioxide thin film

Wu, Z. P., Miyashita, A., Yamamoto, S., Abe, H., Nashiyama, I., Narumi, K., Naramoto, H.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 334 KB

english, 1999

2

Effects of gamma-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Yoshihiro Takahashi, Kazunori Ohnishi, Hajime Okumura, Sadafumi Yoshida

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1998

Language:

english

File:

PDF, 3.31 MB

english, 1998

3

γ-Ray irradiation effects on 6H-SiC MOSFET

Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Yasushi Aoki, Isamu Nashiyama

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 113 KB

english, 1999

4

Magnetic field distributions and energy losses resulting from metal tape motion

Ohteru, S., Kobayashi, H., Nashiyama, I.

Journal:

IEEE Transactions on Magnetics

Year:

1967

Language:

english

File:

PDF, 451 KB

english, 1967

5

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Itoh, Hisayoshi, Ohshima, Takeshi, Aoki, Yasushi, Abe, Koji, Yoshikawa, Masahito, Nashiyama, Isamu, Okumura, Hajime, Yoshida, Sadafumi, Uedono, Akira, Tanigawa, Shoichiro

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 420 KB

english, 1997

6

Depth profile analysis of proton damage by channeling

Nashiyama, Isamu

Journal:

Physical Review B

Year:

1978

Language:

english

File:

PDF, 658 KB

english, 1978

7

Damage distributions in hydrogen-bombarded silicon

Nashiyama, Isamu

Journal:

Physical Review B

Year:

1979

Language:

english

File:

PDF, 612 KB

english, 1979

8

[IEEE 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference - Norfolk, VA, USA (12-16 July 1999)] 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) - The irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Saidoh, M., Fukuda, M., Arakawa, K., Tajima, S., Sunaga, H., Yotsumoto, K., Kamiya, T., Tanaka, R., Hirao, T., Nashiyama, I., Ohshima, T., Itoh, H., Okada, S., Nemoto, N., Kuboyama, S., Matsuda, S.

Year:

1999

Language:

english

File:

PDF, 447 KB

english, 1999

9

Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Ohshima, Takeshi, Uedono, Akira, Itoh, Hisayoshi, Yoshikawa, Masahito, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu, Bouwhuis, L., Tanigawa, Shoichiro, Frank, Thomas, Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 392 KB

english, 2000

10

Intrinsic Defects in Cubic Silicon Carbide

H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura, S. Yoshida

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 431 KB

english, 1997

11

Radiation effect on superconductivity in β-(BEDT-TTF)2I3

Madoka Tokumoto, Isamu Nashiyama, Keizo Murata, Hiroyuki Anzai, Takehiko Ishiguro, Gunzi Saito

Journal:

Year:

1986

Language:

english

File:

PDF, 188 KB

english, 1986

12

Superconductivity of the organic conductor, β-(BEDT-TTF)2I3 viewed from Hc2 and the effect of impurity

K. Murata, M. Tokumoto, N. Toyota, I. Nashiyama, H. Anzai, G. Saito, Y. Muto, K. Kajimura, T. Ishiguro

Journal:

Year:

1987

Language:

english

File:

PDF, 231 KB

english, 1987

13

Characterization of 3CSiC epilayers by pulsed electron spin resonance

H. Okumura, H. Itoh, I. Nashiyama, S. Yamasaki, S. Misawa, S. Yoshida

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 293 KB

english, 1992

14

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

M. Yoshikawa, N. Nemoto, H. Itoh, I. Nashiyama, H. Okumura, S. Misawa, S. Yoshida

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 582 KB

english, 1997

15

Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions

Toshio Hirao, Hisayoshi Itoh, Sohei Okada, Isamu Nashiyama

Journal:

Radiation Physics and Chemistry

Year:

2001

Language:

english

File:

PDF, 174 KB

english, 2001

16

Formation of oxide-trapped charges in 6HSiC MOS structures

Masahito Yoshikawa, Kazunari Saitoh, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Hajime Okumura, Sadafumi Yoshida

Journal:

Radiation Physics and Chemistry

Year:

1997

Language:

english

File:

PDF, 430 KB

english, 1997

17

Degradation of SiGe devices by proton irradiation

Hidenori Ohyama, Jan Vanhellemont, Yasukiyo Takami, Hiromi Sunaga, Isamu Nashiyama, Yoshiya Uwatoko, Jef Poortmans, Matty Caymax

Journal:

Radiation Physics and Chemistry

Year:

1997

Language:

english

File:

PDF, 403 KB

english, 1997

18

Diagnosis of the profile of the heavy-ion microbeam and estimation of the aiming accuracy of the single-ion-hit with using CR-39

Tsuyoshi Hamano, Toshio Hirao, Isamu Nashiyama, Takuro Sakai, Tomihiro Kamiya, Keizo Ishii, Masahiro Takebe

Journal:

Radiation Physics and Chemistry

Year:

1998

Language:

english

File:

PDF, 893 KB

english, 1998

19

100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing

T. Ohshima, K. Abe, H. Itoh, M. Yoshikawa, K. Kojima, I. Nashiyama, S. Okada

Journal:

Applied Physics A: Materials Science & Processing

Year:

2000

Language:

english

File:

PDF, 85 KB

english, 2000

20

Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions

Hisayoshi Itoh, Akira Uedono, Takeshi Ohshima, Yasushi Aoki, Masahito Yoshikawa, Isamu Nashiyama, Shoichiro Tanigawa, Hajime Okumura, Sadafumi Yoshida

Journal:

Applied Physics A: Materials Science & Processing

Year:

1997

Language:

english

File:

PDF, 373 KB

english, 1997

21

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura, S. Yoshida

Journal:

Applied Physics A: Materials Science & Processing

Year:

1998

Language:

english

File:

PDF, 140 KB

english, 1998

22

Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

T. Ohshima, A. Uedono, K. Abe, H. Itoh, Y. Aoki, M. Yoshikawa, S. Tanigawa, I. Nashiyama

Journal:

Applied Physics A: Materials Science & Processing

Year:

1998

Language:

english

File:

PDF, 209 KB

english, 1998

23

Radiation induced defects in CVD-grown 3C-SiC

Itoh, H., Yoshikawa, M., Nashiyama, I., Misawa, S., Okumura, H., Yoshida, S.

Journal:

IEEE Transactions on Nuclear Science

Year:

1990

Language:

english

File:

PDF, 659 KB

english, 1990

24

Defects in electron-irradiated 3C-SiC epilayers observed by positron annihilation

H. Itoh, M. Yoshikawa, I. Nashiyama, L. Wei, S. Tanigawa, S. Misawa, H. Okumura, S. Yoshida

Journal:

Hyperfine Interactions

Year:

1993

Language:

english

File:

PDF, 279 KB

english, 1993

25

Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons

Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Shunji Misawa, Hajime Okumura, Sadafumi Yoshida

Journal:

Journal of Electronic Materials

Year:

1992

Language:

english

File:

PDF, 405 KB

english, 1992

26

Deuteron channeling for defect analysis of silicon carbide

I. Nashiyama, T. Nishijima, E. Sakuma, S. Yoshida

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1988

Language:

english

File:

PDF, 434 KB

english, 1988

27

Application of a nuclear microprobe to analysis of SiC semiconductor

H. Sekiguchi, T. Nishijima, I. Nashiyama, N. Kobayashi, T. Misawa, S. Yoshida

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 467 KB

english, 1991

28

Study of basic mechanisms of single event upset using high-energy microbeams

I. Nashiyama, T. Nishijima, H. Sekiguchi, Y. Shimano, T. Goka

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 346 KB

english, 1991

29

Measurement of the H2-D mass difference with a nuclear microprobe

H. Sekiguchi, T. Nishijima, I. Nashiyama

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1992

Language:

english

File:

PDF, 234 KB

english, 1992

30

Effects of micro-beam induced damage on single-event current measurements

T. Hirao, I. Nashiyama, T. Kamiya, T. Nishijima

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 524 KB

english, 1995

31

Study of 3C-SiC crystal defects by microbeam channeling methods

H. Sekiguchi, T. Nishijima, I. Nashiyama, S. Misawa, S. Yoshida

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 606 KB

english, 1995

32

Development of high-resolution single-ion PSD using random access memories

Tsuyoshi Hamano, Masahiro Takebe, Toshio Hirao, Isamu Nashiyama, Tomihiro Kamiya, Tamotsu Suda, Takuro Sakai

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 580 KB

english, 1997

33

Study of basic mechanisms of semiconductor devices using ion beam induced charge (IBIC) collection

T. Nishijima, H. Sekiguchi, T. Hirao, I. Nashiyama, N. Nemoto, S. Matsuda, N. Shiono

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 535 KB

english, 1997

34

Effect of ion position on single-event transient current

Toshio Hirao, Isamu Nashiyama, Tomihiro Kamiya, Tamotsu Suda, Takuro Sakai, Tsuyoshi Hamano

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

35

Studies of charge collection mechanisms in SOI devices using a heavy-ion microbeam

Toshio Hirao, Tsuyoshi Hamano, Takuro Sakai, Isamu Nashiyama

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 184 KB

english, 1999

36

Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation

T. Ohshima,K. Abe,H. Itoh,M. Yoshikawa,K. Kojima,I. Nashiyama…

Journal:

Applied Physics A: Materials Science & Processing

Year:

2000

Language:

english

File:

PDF, 85 KB

english, 2000

37

Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

Itoh, Hisayoshi, Yoshikawa, Masahito, Nashiyama, Isamu, Okumura, Hajime, Misawa, Shunji, Yoshida, Sadafumi

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 948 KB

english, 1995

38

Electron spin resonance in electron-irradiated 3C-SiC

Itoh, Hisayoshi, Hayakawa, Naohiro, Nashiyama, Isamu, Sakuma, Eiichiro

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 541 KB

english, 1989

39

Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations

Morita, Yousuke, Ohshima, Takeshi, Nashiyama, Isamu, Yamamoto, Yasunari, Kawasaki, Osamu, Matsuda, Sumio

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 425 KB

english, 1997

40

[IEEE 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Sevilla, Spain (2011.09.19-2011.09.23)] 2011 12th European Conference on Radiation and Its Effects on Components and Systems - Terrestrial neutron-induced single-event burnout in SiC power diodes

Asai, Hiroaki, Sugimoto, Kenji, Nashiyama, Isamu, Iide, Yoshiya, Shiba, Kensuke, Matsuda, Mieko, Miyazaki, Yoshio

Year:

2011

Language:

english

File:

PDF, 538 KB

english, 2011

41

Single-event current transients induced by high energy ion microbeams

Nashiyama, I., Hirao, T., Kamiya, T., Yutoh, H., Nishijima, T., Sekiguti, H.

Journal:

IEEE Transactions on Nuclear Science

Year:

1993

Language:

english

File:

PDF, 510 KB

english, 1993

42

Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes

Asai, Hiroaki, Sugimoto, Kenji, Nashiyama, Isamu, Iide, Yoshiya, Shiba, Kensuke, Matsuda, Mieko, Miyazaki, Yoshio

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

43

[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - Development of facilities for investigating single-event effects

Nashiyama, I., Hirao, T., Itoh, H., Kamiya, T., Naito, I., Matsuda, S.

Year:

1996

Language:

english

File:

PDF, 697 KB

english, 1996

44

[IEEE 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 - Fontevraud, France (13-17 Sept. 1999)] 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) - Relationship between single-event upset immunity and fabrication processes of recent memories

Nemoto, N., Shindou, H., Kuboyama, S., Itoh, H., Matsuda, S., Okada, S., Nashiyama, I.

Year:

2000

Language:

english

File:

PDF, 597 KB

english, 2000

45

Heterophase polydomain structure and metal-semiconductor phase transition in vanadium dioxide thin films deposited on ( 1010 ) sapphire

Wu, Z.P., Miyashita, A., Nashiyama, I., Naramoto, H.

Journal:

Philosophical Magazine Letters

Year:

1999

Language:

english

File:

PDF, 179 KB

english, 1999

46

[IEEE 2003 IEEE Radiation Effects Data Workshop - Monterey, CA, USA (21-25 July 2003)] 2003 IEEE Radiation Effects Data Workshop - Correlation between proton and heavy-ion SEUs in commercial memory devices

Chiba, K., Nashiyama, I., Sugimoto, K., Nemoto, N., Asai, H., Iide, Y., Shindo, H., Ikeda, N., Kuboyama, S., Matsuda, S.

Year:

2003

Language:

english

File:

PDF, 427 KB

english, 2003

47

Crystallization of an amorphous layer in P[sup +]-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira, Tanigawa, Shoichiro, Ohshima, Takeshi, Itoh, Hisayoshi, Yoshikawa, Masahito, Nashiyama, Isamu, Frank, Thomas, Pensl, Gerhard, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 333 KB

english, 2000

48

Degradation of Si1−xGex epitaxial devices by proton irradiation

H. Ohyama, K. Hayama, J. Vanhellemont, J. Poortmans, M. Caymax, Y. Takami, H. Sunaga, I. Nashiyama, Y. Uwatoko

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

49

Degradation and recovery of proton irradiated Si/sub 1-x/Ge/sub x/ epitaxial devices

Ohyama, H., Vanhellemont, J., Takami, Y., Hayama, K., Sunaga, H., Nashiyama, I., Uwatoko, Y., Poortmans, J., Caymax, M.

Journal:

IEEE Transactions on Nuclear Science

Year:

1996

Language:

english

File:

PDF, 690 KB

english, 1996

50

Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure

Yoshikawa, M., Itoh, H., Morita, Y., Nashiyama, I., Misawa, S., Okumura, H., Yoshida, S.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 739 KB

english, 1991

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